as regards semiconductors any thermal annealing treatment involves atomic diffusion in semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples the diffusion based aspects have acquired an empirical outlook verging almost on alchemy

as regards semiconductors any thermal annealing treatment involves atomic diffusion in semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples the diffusion based aspects have acquired an empirical outlook verging almost on alchemy

atomic diffusion in semiconductors refers to the migration of atoms including host dopant and impurities diffusion occurs in all thermodynamic phases but the solid phase is the most important in semiconductors there are two types of semiconductor solid phase amorphous including organic and crystalline

atomic diffusion in semiconductors d shaw the diffusion or migration of atoms in matter of whatever form is a basic consequence of the existence of atoms in metals atomic diffusion has a well established position of importance as it is your web browser is not enabled for javascript

atomic diffusion in semiconductors d shaw home worldcat home about worldcat help search search for library items search for lists search for contacts search for a library create lists bibliographies and reviews or search worldcat find items in libraries near you

annealing treatment involves atomic diffusion in semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples the

atomic diffusion is the random thermal movement of atoms through a solid in crystals atomic diffusion can occur through interstitial or substitutional means interstitial diffusion refers to when atoms move in between the lattice points of a crystal

as regards semiconductors any thermal annealing treatment involves atomic diffusion in semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples the diffusion based aspects have acquired an empirical outlook verging almost on alchemy

bracht h stolwijk n a 2 diffusion in ge in beke d l eds diffusion in semiconductors landolt börnstein group iii condensed matter numerical data and functional relationships in science and technology vol 33a

shaw d ed atomic diffusion in semiconductors plenum press new york 1973

in the case of atomic or molecular diffusion the ÒconductivityÓ is referred to as the diffusivity or the diffusion constant and is represented by the symbol d w e realize from the above considerations that this diffusion constant d reflects the mobility of the

atomic diffusion in semiconductors refers to the migration of atoms including host dopant and impurities diffusion occurs in all thermodynamic phases but the solid phase is the most important in semiconductors there are two types of semiconductor solid phase amorphous including organic and crystalline

in the case of atomic or molecular diffusion the quot conductivity quot is referred to as the diffusivity or the diffusion constant and is represented by the symbol d

in the case of atomic or molecular diffusion the quot conductivity quot is referred to as the diffusivity or the diffusion constant and is represented by the symbol d

in the case of atomic or molecular diffusion the quot conductivity quot is referred to as the diffusivity or the diffusion constant and is represented by the symbol d

drift and diffusion currents reading notes and anderson2 sections 3 1 3 4 i j x area flowing in a semiconductor block with face area a under the influence of electric field e the where istheconcentration and disthe diffusion coefficient f d

a simple description of atomic diffusion mechanisms in semiconductors is given and then the meaning of the diffusion coefficient is outlined studies of diffusion in the elementa

shaw d 1973 atomic diffusion in semiconductors new york plenum ch 6 shih k k allen j w and pearson g l 1968 j phys chem solids 29 37 sirota n n 1968 semiconductors and semimetals vol 4 ed r k williardson and a c beer new york academic

and s m hu in atomic diffusion in semiconductors d shaw ed plenum press new york 1973 x concentration t 0 x0 c l t 1 gt 0 t2 gt t1 t3 gt gt t2 c h 0 figure5 16 solution to fick x27 s second law equa tion 5 10 for the case of a solid of thickness

atomic diffusion in semiconductors refers to the migration of atoms including host dopant and impurities diffusion occurs in all thermodynamic phases but the solid phase is the most important

diffusion coefficients in the grain boundary were obtained following leclaire x27 s method of analysis an arrhenius plot of grain boundary diffusion coefficients gave rise to an activation energy of 2 65 ev and pre exponential factor d x27 0 4 8 10 3 cm 2 s 1

the diffusion behavior of elements constituting hastelloy c 276 c si mn co w fe cr mo and ni in alumina films was investigated using secondary ion mass spectroscopy the films were deposited by ion beam assisted deposition and annealed in vacuum over a temperature range of 500 1000 c

it is proposed that double acceptor level vacancies are responsible for arsenic diffusion into silicon a computer program which combines this diffusion mechanism with the formation of arsenic clusters and an internal electric field induced by the impurity gradient is used to calculate arsenic diffusion profiles in wide ranges of diffusion temperatures and surface impurity concentrations

the diffusion coefficients d 300 c 1 03 10 15 cm 2 s 1 d 400 c 1 69 10 14 cm 2 s 1 and the activation energy q 0 93 ev are obtained the dominant mechanism of au diffusion in gan is probably the diffusion of an impurity by the interstitial mode comparison with au diffusion in other semiconductors is given and

kendall d l 1968 semiconductors and semimetals vol 4 ed r k williardson and a c beer new york academic google scholar könig u 1973 thesis rwth aachen google scholar shaw d 1973 atomic diffusion in semiconductors new york plenum ch 6

yet in semiconductors espe eialiy si atomic diffusion processes are poorly understood the most fundamental of these pro cesses is self diffusion namely the motion of si atoms in the si lattice in this paper we focus on the question of self diffusion in si

this article reviews the studies of diffusion and defect phenomena induced by high concentration zinc diffusion in the single crystal iii v compound semiconductors gaas gap gasb and inp by methods of transmission electron microscopy and their consequences for numerical modelling of zn and cd diffusion concentration profiles

volume 146 number 7 8 physics letirs a 11 june 1990 au si diffusion size effect a v vaisleib and m g goldiner centre of scientific research investigation automation and metrology moldavian academy of sciences grosul street 3 2 kishinev 277028 ussr received 17 august 1989 revised manuscript received 15 january 1990 accepted for publication 2 april 1990 communicated by v m agranovich

the diffusion coefﬁcients d 300 c 1 03 10 15 cm2 s 1 d 400 c 1 69 10 14 cm2 s 1 and the activation energy q 0 93 ev are obtained the dominant mechanism of au diffusion in gan is probably the diffusion of an impurity by the interstitial mode comparison with au diffusion in other semiconductors is given and discussed 1